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Granular Topological Insulator: Transport Properties and Sample Preparation

Pandey, Atul (2019) Granular Topological Insulator: Transport Properties and Sample Preparation. Masters thesis, Indian Institute of Science Education and Research Kolkata.

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    Abstract

    In this, I have shown that thin films of newly prepared target of BiSbTe1.5Se1.5 grown on Si (100) or Si (111) substrate and STS thin films grown on Si (111) substrate show bulk insulating TI behaviour, while BS and STS films grown on Si (100) show bulk metallic TI behaviour. All thin films are granular in morphology. Thin films of BiSbTe1.5Se1.5 exhibits WAL with two decoupled surface states at low temperature regime, in higher temperature regime two surface states couple and bulk acts as an additional channel giving quantum correction, which was not observed earlier in other thin film of BSTS TIs. I have explored and emphasized how parallel field MR can be utilized to investigate surface and bulk contribution in TIs. While perpendicular MR is well studied, parallel MR has a lot scope left.

    Item Type: Thesis (Masters)
    Additional Information: Supervisor: Prof. Chiranjib Mitra
    Uncontrolled Keywords: Condensed Matter Physics; Granular Topological Insulator; Topological Insulator; TRS; Time Reversal Symmetry
    Subjects: Q Science > QC Physics
    Divisions: Department of Physical Sciences
    Depositing User: IISER Kolkata Librarian
    Date Deposited: 11 Oct 2019 12:26
    Last Modified: 11 Oct 2019 12:26
    URI: http://eprints.iiserkol.ac.in/id/eprint/868

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